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Advanced Functional Materials 内封面论文

已有 10374 次阅读 2013-4-22 11:35 |系统分类:论文交流|关键词:学者

Single-Crystalline p-Type Zn3As2 Nanowires for Field-Effect Transistors and Visible-Light Photodetectors on Rigid and Flexible SubstratesGui Chen, Zhe Liu, Bo Liang, Gang Yu, Zhong Xie, Hongtao Huang, Bin Liu, Xianfu Wang, Di Chen, Ming-Qiang Zhu*, Guozhen Shen*

DOI: 10.1002/adfm.201202739 【封面已接受,即将出版】


Abstract

Zn3As2 is an important p-type semiconductor with the merit of high effective mobility. The synthesis of single-crystalline Zn3As2 nanowires (NWs) via a simple chemical vapor deposition method is reported. High-performance single Zn3As2 NW field-effect transistors (FETs) on rigid SiO2/Si substrates and visible-light photodetectors on rigid and flexible substrates are fabricated and studied. As-fabricated single-NW FETs exhibit typical p-type transistor characteristics with the features of high mobility (305.5 cm2 V−1 s−1) and a high Ion/Ioff ratio (105). Single-NW photodetectors on SiO2/Si substrate show good sensitivity to visible light. Using the contact printing process, large-scale ordered Zn3As2 NW arrays are successfully assembled on SiO2/Si substrate to prepare NW thin-film transistors and photodetectors. The NW-array photodetectors on rigid SiO2/Si substrate and flexible PET substrate exhibit enhanced optoelectronic performance compared with the single-NW devices. The results reveal that the p-type Zn3As2 NWs have important applications in future electronic and optoelectronic devices.





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