博文
Tunable transport properties of n-type ZnO nanowires by Ti plasma immersion ion
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Single-crystalline, transparent conducting ZnO nanowires were obtained simply by Ti plasma immersion ion implantation (PIII). Electrical transport characterizations demonstrate that the n-type conduction of ZnO nanowire could be tuned by appropriate Ti-PIII. With increasing the energy of PIII, the resistivity of ZnO decreases from 4 × 102 Ω·cm to 3.3 × 10-3 Ω·cm, indicating a semiconductor-metal transition. The failure-current densities of the metallic ZnO could be up to 2.75×107 A /cm2. Therefore, this facile method may provide an inexpensive alternative to ITO as transparent conducting oxide materials.(journal of applied physics: communication)
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https://m.sciencenet.cn/blog-41999-35985.html
上一篇：Morphology Controllable Synthesis of α-Fe2O3 1D Nanostructures: Growth Mechanism
下一篇：马上就要博士毕业,我也晒晒自己的博士工作吧.
