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One-Dimensional Nanostructures and Devices of II–V Group Semiconductors

已有 3858 次阅读 2009-5-17 12:57 |系统分类:科研笔记|关键词:学者

Nanoscale Research Letters, 2009, in press.

One-Dimensional Nanostructures and Devices of II–V Group Semiconductors

Guozhen ShenContact Information and Di Chen1

(1)  Wuhan National Laboratory for Optoelectronics and College of Optoelectronic Science and Technology, Huazhong University of Science and Technology, Wuhan, 430074, People’s Republic of China

Received: 12 April 2009  Accepted: 24 April 2009  Published online: 15 May 2009

Abstract  The II–V group semiconductors, with narrow band gaps, are important materials with many applications in infrared detectors, lasers, solar cells, ultrasonic multipliers, and Hall generators. Since the first report on trumpet-like Zn3P2 nanowires, one-dimensional (1-D) nanostructures of II–V group semiconductors have attracted great research attention recently because these special 1-D nanostructures may find applications in fabricating new electronic and optoelectronic nanoscale devices. This article covers the 1-D II–V semiconducting nanostructures that have been synthesized till now, focusing on nanotubes, nanowires, nanobelts, and special nanostructures like heterostructured nanowires. Novel electronic and optoelectronic devices built on 1-D II–V semiconducting nanostructures will also be discussed, which include metal–insulator-semiconductor field-effect transistors, metal-semiconductor field-effect transistors, and pn heterojunction photodiode. We intent to provide the readers a brief account of these exciting research activities.

Keywords  Nanowires - Nanotubes - Nanobelts - Semiconductors - Nanoelectronics

上一篇:征稿启事:纳米线专刊(A Speical Issue on Nanowires)


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