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iCANX 第105期直播预告︱iCANX 青年科学家奖专题

已有 798 次阅读 2022-7-8 10:43 |个人分类:国际交流|系统分类:科研笔记

本期为iCANX Talks第105期,北京时间7月8日(周五)20:00,宾夕法尼亚大学的 Deep Jariwala 助理教授与中国科学技术大学的孙海定研究员的讲座将准时在iCANX 平台开播!

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Deep Jariwala 与大家分享的主题是“原子级薄半导体中的强光物质相互作用”,届时将介绍二维半导体中强光物质相互作用的关键概念,阐述本征共振的存在如何丰富半导体与光的强相互作用,讨论光与磁性半导体的强相互作用等。

孙海定与大家分享的主题是“用于紫外光发射和检测器件的宽禁带半导体”,届时将展示其课题组近几年在紫外光电器件中的研究进展,重点探讨高效深紫外LED和microLED的设计与制备,还有包括新型光电化学光探测器的研究。


This is iCANX Talks Vol.105. At 20:00 on July 8 (Friday), Beijing time, the lectures by Assistant Professor Deep Jariwala of the University of Pennsylvania and Haiding Sun of the University of Science and Technology of China will be broadcast on the iCANX platform on time!

Deep Jariwala's topic is "Strong-Light Matter Interactions in Atomically-Thin Semiconductors". He will introduce the key concept of strong-light matter interactions in 2D semiconductors and elaborate how the presence of intrinsic resonance enriches the physics of strong-interaction with light.

Haiding Sun's topic is "Wide Bandgap Semiconductors for Ultraviolet Light Emitting and Detecting Devices". He will discuss the successful demonstration of high-efficient deep-ultraviolet LEDs and high photoresponsive solar-blind photodetectors in the form of AlGaN-based nanowires.


报告信息

主题1:原子级薄半导体中的强光物质相互作用

Topic1: Strong-Light Matter Interactions in Atomically-Thin Semiconductors


主讲人1:宾夕法尼亚大学 Deep Jariwala

Speaker1:Deep Jariwala, University of Pennsylvania, Philadelphia


主题2:用于紫外光发射和检测器件的宽禁带半导体

Topic2: Wide Bandgap Semiconductors for Ultraviolet Light Emitting and Detecting Devices


主讲人2:中国科学技术大学 孙海定

Speaker2:Haiding Sun, the University of Science and Technology of China


时间:7月8日(周五)北京时间 20:00

Date: July 8 (Friday) 

       08:00 (New York)   13:00 (London)

       14:00 (Paris)           17:30 (New delhi)

       20:00 (Beijing)       22:00 (Sydney)

地点:iCANX Talks 平台

https://www.ican-x.com/talks


长按识别二维码,一键预约!

Long press to identify the QR code and jump to the webpage!

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报告1介绍/Abstract

在过去的十年中,稳定的原子级薄二维材料在任意基底上的隔离导致了固体物理和半导体器件研究的一场革命。这些半导体现在被认为是下一代电子、光电子和光子器件的基石。在这次演讲中,我将介绍二维半导体中强光物质相互作用的关键概念。我将特别关注这些半导体的激子性质,并详细阐述本征共振的存在如何丰富其与光的强相互作用。我将介绍过渡金属二卤族半导体、它们的超晶格和钙钛矿半导体的结果。如果时间允许,我还将讨论光与磁性半导体的强相互作用。最后讨论这些半导体的未来前景。


The isolation of stable atomically thin two-dimensional (2D) materials on arbitrary substrates has led to a revolution in solid state physics and semiconductor device research over the past decade. These semiconductors are now considered building blocks for next generation of electronic, opto-electronic and photonic devices. In this talk, I will introduce the key concept of strong-light matter interactions in 2D semiconductors. In particular I will focus on the excitonic properties of these semiconductors and elaborate how the presence of intrinsic resonance enriches the physics of strong-interaction with light. I will present results on transition metal dichalcogenide semiconductors, their superlattices and perovskite semiconductors. If time permits I will also discuss strong interaction of light with magnetic semiconductors. Future prospects of these semiconductors will be discussed in conclusion.


主讲人1介绍/Biography


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Deep Jariwala


宾夕法尼亚大学

University of Pennsylvania

Deep Jariwala是宾夕法尼亚大学电气与系统工程系的助理教授。他的研究兴趣广泛地集中在新材料、表面科学和固体器件的交叉领域,用于计算、传感、光电子和能源收集应用。Deep于2010年完成了他在印度理工学院,巴纳拉斯印度教大学的冶金工程学士学位。德普继续攻读西北大学材料科学与工程博士学位,2015年毕业。在西北大学,Deep对二维半导体的电荷传输和电子应用的研究做出了贡献,并开创性地研究了栅可调、混合维、范德华异质结构。2015-2017年,Deep来到加州理工学院,成为雷斯尼克奖博士后研究员,研究纳米光子器件和超薄太阳能电池,2018年加入宾夕法尼亚大学,并创建了自己的团队。Deep的研究为他赢得了多个专业协会的奖项,包括美国真空学会的Russell and Sigurd Varian奖和Paul H. Holloway奖,美国物理学会的Richard L. Greene博士论文奖,Johannes and Julia Weertman博士奖学金,Hilliard奖,陆军研究办公室青年研究员奖,纳米材料青年研究员奖,TMS材料前沿奖,英特尔明日之星奖和IEEE年度青年电气工程师奖,并入选福布斯杂志30位30岁以下科学家名单,并受邀参加美国国家工程院工程前沿会议。他是《电子与微型机》杂志的编辑委员会和《纳米快报》的早期职业编辑顾问委员会成员。发表期刊论文90余篇,引文13000余次,获专利7项。在宾夕法尼亚大学,他领导了一个由十多名研究生和博士后研究人员组成的研究小组,得到了各种政府机构(NSF、DARPA、ARO、AFOSR)、行业和私人基金会的支持。


Deep Jariwala is an Assistant Professor in Department of Electrical and Systems Engineering at the University of Pennsylvania (Penn). His research interests broadly lie at the intersection of new materials, surface science and solid-state devices for computing, sensing, opto-electronics and energy harvesting applications.  Deep completed his undergraduate degree in Metallurgical Engineering from the Indian Institute of Technology, Banaras Hindu University in 2010. Deep went on to pursue his Ph.D. in Materials Science and Engineering at Northwestern University graduating in 2015. At Northwestern, Deep made contributions to the study of charge transport and electronic applications of two-dimensional (2D) semiconductors and pioneering the study of gate-tunable, mixed-dimensional, van der Waals heterostructures. Deep then moved to Caltech as a Resnick Prize Postdoctoral Fellow from 2015-2017 working on nanophotonic devices and ultrathin solar cells before joining Penn in 2018 and starting his own group. Deep’s research has earned him awards of multiple professional societies including the Russell and Sigurd Varian Award and Paul H. Holloway Award of the American Vacuum Society, The Richard L. Greene Dissertation Award of the American Physical Society, Johannes and Julia Weertman Doctoral Fellowship, the Hilliard Award, the Army Research Office Young Investigator Award, Nanomaterials Young Investigator Award, TMS Frontiers in Materials Award, Intel Rising Star Award and IEEE Young Electrical Engineer of the Year Award in addition to being named in Forbes Magazine list of 30 scientists under 30 and is an invitee to Frontiers of Engineering conference of the National Academy of Engineering.  He serves on the Editorial board of the journals Electronics and Micromachines and on the Early Career Editorial Advisory Board of Nano Letters. He has published over 90 journal papers with more than 13000 citations and 7 patents. At Penn he leads a research group comprising more than ten graduate and postdoctoral researchers supported by a variety of government agencies (NSF, DARPA, ARO, AFOSR), industries and private foundations.


报告2介绍/Abstract

宽禁带氮化物半导体(氮化镓,氮化铝,氮化铟及其合金)被认为是当今最重要的半导体材料,由于其禁带宽度连续可调(从0.6连续可调至6.2 eV)且可以实现n型和p型掺杂,因此被大规模的应用于光电子器件,包括发光器件和光探测器。尤其是基于InGaN的可见光发光器件的发明彻底改变了我们日常照明,用更加环保节能的LED替换了白炽灯,实现了全固态照明,因此被授予2014年诺贝尔物理学奖。而可见光只占整个光波段很小一部分,如果在氮化镓中掺入铝元素,我们可以实现铝镓氮半导体,用于紫外光电器件。本报告中,我们将展示课题组近几年在紫外光电器件中的研究进展,重点探讨高效深紫外LED和microLED的设计与制备,还有包括新型光电化学光探测器的研究。


The III-nitride family (AlN, GaN, InN, and their alloys) has been regarded as one of the most popular semiconductors in the past two decades for optoelectronics (light emitting diodes, photodetectors, etc.). Significantly, the InGaN-based light emitters have revolutionized the lighting industry, promoting energy-efficient and eco-friendly modern solid-state lighting and lasing technologies. Similarly, by alloying GaN with AlN, we can synthesize AlGaN ternary alloys with tunable direct bandgaps from 3.4 eV (GaN) to 6.1 eV (AlN), corresponding to a wide ultraviolet (UV) spectral range from 360 nm to 210 nm, for a broad range of applications including air/water purification, UV curing, data storage, optical communication, etc. In this presentation, we will focus on the development of AlGaN-based high performance UV LEDs and UV detectors. Particularly, we will discuss the successful demonstration of high-efficient deep-ultraviolet LEDs and high photoresponsive solar-blind photodetectors in the form of AlGaN-based nanowires.


主讲人2介绍/Biography


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孙海定

Haiding Sun

中国科学技术大学

University of Science and Technology of China

孙海定博士毕业于美国波士顿大学,目前是中国科学技术大学微电子学院特聘研究员,博士生导师,IEEE高级会员。主要研究宽禁带半导体紫外光电器件的材料外延,器件设计与制备等。迄今为止,撰写4部专著章节,共发表SCI论文90多篇,其中以唯一通讯和第一作者共发表45篇,包括Nature Electronics, Advanced Functional Materials, Nano Letters, Nano Energy, Optics Letter, IEEE Electron Device Letters, Applied Physics Letters等,共6篇论文被选为高被引论文。相关研究成果被领域权威杂志和媒体报道,如Compound Semiconductors, Semiconductors Today, Phys.org, Nanowerk etc.


Prof. Haiding Sun received his Ph.D. in Electrical Engineering from Boston University. He is currently a professor in the School of Microelectronics at University of Science and Technology of China. He has published more than 90 peer-reviewed SCI-index journal papers including Nature Electronics, Advanced Functional Materials, Nano Letters, Optics Letter, IEEE Electron Device Letters, Applied Physics Letters etc. He has written 4 book chapters and holds 4 US, 4 PTC and 26 Chinese Patents. His research interests include the investigation of the physics, MBE and MOCVD epitaxy, fabrication, and characterization of wide bandgap semiconductor materials for both optoelectronics and electronic devices. This includes nanostructures and low-dimensional structures (quantum wires, dots, wells) for nanoelectronics and nanophotonics, based on group III-Nitrides and III-Oxides. His work has been highlighted by more than 100 times in many media outlets including Compound Semiconductors, Semiconductors Today, Phys.org, Nanowerk etc. He is an IEEE Senior Member.




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