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[转载]热点专题 | 二维磁性材料与器件

已有 1406 次阅读 2021-12-2 14:18 |系统分类:论文交流|文章来源:转载

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为了展现国内外在"二维磁性材料与器件"研究领域的代表性成果,"Chinese Physics B"(CPB)编辑部邀请王开友、魏钟鸣、彭波三位老师担任客座编辑,组织了“Two-dimensional magnetic materials and devices”专题,敬请关注!

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    |王开友    研究员     中国科学院半导体研究所

    |魏钟鸣    研究员     中国科学院半导体研究所

    |彭    波    教   授     电子科技大学


量子计算、人工智能等应用的迅猛发展,对高集成度、超高速响应、低功耗的信息存储与信息处理技术提出了更高的需求。然而,传统电子学以电子电荷自由度为基础,随着单个器件的尺寸日渐缩小及芯片集成度不断增加,随之而来的量子效应限制以及高热功耗成为制约芯片性能提升的瓶颈和巨大挑战,摩尔定律也随之失效。而自旋电子学器件利用电子自旋属性传递和存储信息,具有非易失性、高数据处理速度、低能耗、高集成度等优点,因而有望突破上述瓶颈,成为后摩尔时代信息传输、处理领域的关键技术之一。


磁性材料是自旋电子学器件的基础,近年来,二维范德华磁性材料由于在自旋电子学方面具有丰富的物理图像和潜在的应用价值受到人们的广泛关注。二维磁性材料由于具有强磁各向异性,压制了热扰动对长程磁有序的影响,突破了Mermin-Wagner定理限制,在自旋波色散关系中能打开带隙,使基态的磁振子能够维持自旋有序态,并表现出本征的长程磁有序。由于具有超薄厚度,二维磁性材料的磁性能被外场有效调控,比如电场、化学修饰、应力等。同时二维范德华磁性材料还展示了新奇的物理现象,诸如磁近邻效应、交换偏置效应、手性自旋态、量子反常霍尔效应等。另一方面,鉴于二维范德华磁性材料具有无悬挂键的表面,可以堆叠或者生长成具有高质量界面和高自旋注入效率的二维范德华异质结,摆脱晶格匹配和兼容性的限制,有望在高性能自旋阀、自旋晶体管等方面实现重大突破。


本专题收录了近期国内二维磁性材料及器件领域的部分最新研究成果,研究内容涉及二维磁性材料及其异质结的气相生长、光学特性、磁近邻效应、磁性调控、磁阻调控、自旋阀、自旋转移力矩器件及其他自旋电子器件等。希望本专题能够对国内外研究同行有所帮助和启示,促进该领域的合作交流与发展。

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REVIEW

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Review of Raman spectroscopy of two-dimensional magnetic van der Waals materials

Yu-Jia Sun(孙宇伽), Si-Min Pang(庞思敏), and Jun Zhang(张俊)

Chin. Phys. B, 2021, 30 (11): 117104

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Magnetic two-dimensional van der Waals materials forspintronic devices

Yu Zhang(张雨), Hongjun Xu(许洪军), Jiafeng Feng(丰家峰), Hao Wu(吴昊), Guoqiang Yu(于国强), and Xiufeng Han(韩秀峰)

Chin. Phys. B, 2021, 30 (11): 118504


ARTICLES

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Magnetic and electronic properties of two-dimensional metal-organic frameworks TM3(C2NH)12

Zhen Feng(冯振), Yi Li(李依), Yaqiang Ma(马亚强), Yipeng An(安义鹏), and Xianqi Dai(戴宪起)

Chin. Phys. B, 2021, 30 (9): 097102

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Vertical WS2 spin valve with Ohmic property based on Fe3GeTe2 electrodes

Ce Hu(胡策), Faguang Yan(闫法光), Yucai Li(李予才), and Kaiyou Wang(王开友)

Chin. Phys. B, 2021, 30 (9): 097505

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Spin orbit torques in Pt-based heterostructures with van der Waals interface

Qian Chen(陈倩), Weiming Lv(吕伟明), Shangkun Li(李尚坤), Wenxing Lv(吕文星), Jialin Cai(蔡佳林), Yonghui Zhu(朱永慧), Jiachen Wang(王佳晨), Rongxin Li(李荣鑫), Baoshun Zhang(张宝顺), and Zhongming Zeng(曾中明)

Chin. Phys. B, 2021, 30 (9): 097506

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Strain drived band aligment transition of the ferromagnetic VS2/C3N van der Waals heterostructure

Jimin Shang(商继敏), Shuai Qiao(乔帅), Jingzhi Fang(房景治), Hongyu Wen(文宏玉), and Zhongming Wei(魏钟鸣)

Chin. Phys. B, 2021, 30 (9): 097507

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Controlled vapor growth of 2D magnetic Cr2Se3 and its magnetic proximity effect in heterostructures

Danliang Zhang(张丹亮), Chen Yi(易琛), Cuihuan Ge(葛翠环), Weining Shu(舒维宁), Bo Li(黎博), Xidong Duan(段曦东), Anlian Pan(潘安练), and Xiao Wang(王笑)

Chin. Phys. B, 2021, 30 (9): 097601

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Carrier and magnetism engineering for monolayer SnS2 by high throughput first-principles calculations

Qing Zhan(詹庆), Xiaoguang Luo(罗小光), Hao Zhang(张皓), Zhenxiao Zhang(张振霄), Dongdong Liu(刘冬冬), and Yingchun Cheng(程迎春)

Chin. Phys. B, 2021, 30 (11): 117105

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Observation of magnetoresistance in CrI3/graphenevan der Waals heterostructures

Yu-Ting Niu(牛宇婷), Xiao Lu(鲁晓), Zhong-Tai Shi(石钟太), and Bo Peng(彭波)

Chin. Phys. B, 2021, 30 (11): 117506


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SPECIAL TOPIC — Non-Hermitian physics

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官网:http://cpb.iphy.ac.cn  

          https://iopscience.iop.org/journal/1674-1056




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