Ferromagnetism in Dilute Magnetic Semiconductors through Defect Engineering: Li-Doped ZnO

Authors: J. B. Yi, C. C. Lim, G. Z. Xing, H. M. Fan, L. H. Van, S. L. Huang, K. S. Yang, X. L. Huang, X. B. Qin,
B.Y. Wang, T. Wu, L. Wang, H. T. Zhang,  X.Y. Gao, T. Liu, A. T. S. Wee, Y. P. Feng, and J. Ding

期刊：Phys. Rev. Lett. 104, 137201 (2010)

摘要： We demonstrate, both theoretically and experimentally, that cation vacancy can be the origin of ferromagnetism in intrinsic dilute magnetic semiconductors. The vacancies can be controlled to tune
the ferromagnetism. Using Li-doped ZnO as an example, we found that while Li itself is nonmagnetic, it
generates holes in ZnO, and its presence reduces the formation energy of Zn vacancy, and thereby
stabilizes the zinc vacancy. Room temperature ferromagnetism with p type conduction was observed in
pulsed laser deposited ZnO:Li films with certain doping concentration and oxygen partial pressure.

简评：本工作通过实验和理论计算首次演示了稀磁半导体中阳离子空位导致的铁磁行为。通过掺杂非磁性离子锂来调控Zn空位的浓度，从而调制铁磁。这是Dr Yi, JB的第二篇在这个领域中PRL, 其一系列的实验工作对于人们理解复杂的氧化物稀磁半导体中一些基本物理现象有很大的促进作用。

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