半导体里程_博物馆_1966-半导体读写存储器

1966年,半导体读写存储器适用于满足高速存储的需要。因为拥有高性能的存储区和高速缓存的应用，双极性的RAM开始进入计算机市场

随机读写存储器储存信息变化频繁因此必须快速存取。到20世纪70年代中期，由于具有最低的单位存储位成本，磁性铁氧体磁芯阵列占据了随机存储技术的主导地位。1963年，Robert Norman在仙童半导体公司研发取得了半导体静态RAM的设计专利。在1965年，Scientific Data Systems, Santa Monica, CA and Signetics 几家公司合作开发出了一种全解码的8位双极型器件，并且在同年晚些时候元器件工程师Ben Agusta and Paul Castrucci 开发出了SP95——一种用于IBM系统的16位的RAM。1966年，Tom Longo领导的团队为霍尼韦尔公司4200型小型计算机设计的16位晶体管逻辑电路高速暂存存储器TMC3162成为第一个被广泛使用的半导体RAM。仙童公司、西尔瓦尼亚公司、美国德州仪器公司也开始制造这种产品。随后产生的64位器件有以下几种：IBM的缓存芯片、仙童公司的9035和93403，因特尔的3101，和德州仪器的SN7489.

1969年，IBM纽约州东费西基尔研究中心为1971的装运系统生产出了128位的器件——370 Model 145，这是该公司的第一个商业计算机采用的半导体主存储器。1970年4月，仙童公司使用H.T. Chua 设计的256位晶体管逻辑电路芯片4100（aka93400）完成了为宝来公司Illiac IV设计的半导体主存储系统。使用Douglas Peltzer’s Isoplanar的脱氧过程，能够在提高速度的同时减少硅片的消耗。1971年，Bill Herndon据此设计出了一种快速的256位晶体管逻辑电路存储器93410。以Isoplanar过程为基础，克雷一号超级计算机使用了65000个仙童公司生产的1024位ECL RAM。双极性技术能让计算机速度更快，但是它需要使用MOS程序来推广低成本的解决方案以便于主存储器得到广泛的多用途的应用。

译者:哈尔滨工业大学(威海)090840212 高丙欢

校对:哈尔滨工业大学(威海)090840213 邱东阳

http://www.computerhistory.org/semiconductor/timeline/1978-Semiconductor.html

版权 copyright bywww.computerhistory.org

 Metal mask plot for a 16-bit bipolar TTL RAM. Screen image from a 1967 TV documentary

具有16位双极性晶体管逻辑电路读写存储器的金属掩膜图片 拍摄于一部1967年的电视纪录片

128-bit bipolar RAM designed for the IBM System/360 Model 145 main memory is compared to a magnetic core array 为IBM系统设计的128位双极性RAM，主存储器是磁芯阵列

256-bit TTL RAM used in the Illiac IV Processor Element Memory

256位晶体管逻辑电路RAMIlliac IV处理机器件存储器中使用的256位晶体管逻辑电路RAM

The Cray 1 supercomputer used 65,000 Fairchild 10415 high-speed 1024-bit ECL chips for main memory

主存储器中含有65000个仙童公司生产的高速1024位ECL芯片

Credit: Fairchild Camera & Instrument Corporation

Random Access Read-Write Memories (RAMs) store information that changes frequently and must be accessed quickly. Offering the lowest cost per storage bit, magnetic ferrite core arrays comprised the dominant RAM technology through the mid-1970s. Robert Norman patented a semiconductor static RAM design at Fairchild in 1963 that was later used by IBM as the Harper cell. In 1965 a cooperative development between Scientific Data Systems, Santa Monica, CA and Signetics produced a fully-decoded 8-bit bipolar device and later that year Components Division engineers Ben Agusta and Paul Castrucci developed the SP95, a 16-bit RAM for the IBM System/360 Model 95. A team led by Tom Longo at Transitron built the TMC3162 16-bit TTL scratchpad memory for the Honeywell Model 4200 minicomputer in 1966 that became the first widely second sourced semiconductor RAM. Fairchild (9033), Sylvania (SM-80), and TI (SN7481) also manufactured the design. 64-bit devices followed from IBM (cache memory chip), Fairchild (9035 and 93403), Intel (3101), and TI (SN7489)

 In 1969 the IBM East Fishkill, NY facility produced a 128-bit device for the 1971 shipment of System/370 Model 145, the company's first commercial computer to employ semiconductor main memory. Using the 4100 (aka 93400) 256-bit TTL chip designed by H.T. Chua, Fairchild delivered semiconductor main memory systems for the Burroughs Illiac IV computer in April 1970. Using Douglas Peltzer’s Isoplanar oxide-isolated process that improved speed while consuming less silicon area, Fairchild's Bill Herndon designed a fast 256-bit TTL memory (93410) in 1971. The Cray 1 supercomputer introduced in 1976 used 65,000 Fairchild 1024-bit ECL RAM chips (10415) based on the Isoplanar process Bipolar technology enabled faster computers but it took the MOS process to deliver low-cost solutions for widespread use in main memory and general-purpose applications. (1970 Milestone)