pdated 17/10/2011 by Li Lei 1. 低配位原子间短而强的键会引起芯电荷的局域电子钉扎 , 产生正的深能级移动 ; 2. 紧束缚高密度芯电子会使在价带顶部的非键电子(如碳的π电子和贵金 s 轨道上的半满电子)极化,产生负的浅能级移动; 3. 低配位诱导正的芯能级移动,芯能级移动的大小正比于平衡状态下的单键能; 4. 配位数越低扎钉效应产生的极化效应也越明显; 5. 量子钉扎和电荷极化相互耦合会产生新的能态和价带劈裂; 6. 由于 W 边缘的价带同 Rh 吸附原子和 Ag/Pd 合金相似, W 可代替它们作为施主型催化剂; 7. 通过 ZPS 的方法可以得到,当 Re 吸附氧时,由于 O-Re 键能更强,所以芯能级会向深能级移动。 XPS revelation of W edges as a potential donor-type catalyst http://www.ntu.edu.sg/home/ecqsun/RTF/PCCP-W-edge.pdf Atomic Scale Purification of Re Surface Kink States with and without Oxygen Chemisorption http://www.ntu.edu.sg/home/ecqsun/RTF/JPCC-Re.pdf Purified rhodium edge states: undercoordination-induced quantum entrapment and polarization http://www.ntu.edu.sg/home/ecqsun/RTF/PCCP-Rh-edge.pdf
ASME 2010 International Mechanical Engineering Congress Exposition http://www.asmeconferences.org/Congress2010/index.cfm Abstract Submission: Deadline: March 1, 2010 Topics include: Track 1 Advances in Aerospace Technology Track 2 Biomedical and Biotechnology Engineering Track 4 Design and Manufacturing Track 5 Electronics and Photonics Track 6 Nano-Energy Track 7 Energy Systems: Analysis, Thermodynamics and Sustainability Track 8 Engineering Education and Professional Development Track 9 Engineering to Address Climate Change Track 10 Fluid Flow, Heat Transfer and Thermal Systems Track 11 Dynamic Systems and Control Track 12 Mechanics of Solids, Structures and Fluids Track 13 Micro and Nano Systems Track 14 New Developments in Simulation Methods and Software for Engineering Applications Track 15 Processing and Engineering Applications of Novel Materials Track 16 Recent Advances in Engineering Track 17 Safety Engineering, Risk Analysis and Reliability Methods Track 18 Sustainable Products and Processes Track 19 Transportation Systems Track 20 Sound, Vibration and Design Track 21 Posters
张永和离子共价论应用 (14) 张永和离子共价论导出 Wen 电子受体强度法 法国国家实验室 S. J. Wen, 等 用张永和离子共价论 推导出 电子受体强法 : M (m-n)+ ____ M m+ + ne - 论文说:离子掺加物 M m+ 的电子接受强度可由张永和建立的经验关系式计算: L = z/r k 2 7.7X + 8.0 式中 L 是元素的路易士阳离子强度 , z/r k 2 ( z 是原子核电荷数, r k 2 是离子半径)与静电力和元素的离子电负性 Xz 有关。我们曾多次报道,当路易士阳离子强度 L 增大时离子给予体中心的电子接受强度降低。因此与高 L 值给予体中心(特别是氧化态)掺和的 ITO (或 IO )具有高活动性,即高导电率。 Y. Zhang,, Inorg Chem., 1982, 21, 3889 . S. J. Wen, G. Campet, and J. P. Manaud Active and Passive Elec.Comp.,1993,Vol.15,pp.67-74