张永和电负性 (28): Ge 可提高ITO导电率 法国国家实验室 S.J.Wen, G.Campet, J.P.Manaud, 用 Zhang 路易士酸强度计算出:在 ITO 中掺入 Ge 可提高导电率 . 氧化铟锡 ( ITO ,或者 掺锡氧化铟 ) 。 ITO 主要的特性是其 电 学传导 和 光学透明 的组合。用于制作 液晶显示器 、 电子纸 太阳能电池 、和 抗静 电镀膜 。 也被用于 红外线 - 反射镀膜 ( 热镜 ) 、 钠蒸汽灯 玻璃等。别的应用包括 气体传感器 、 抗反射膜 、激光器的 布拉格反射器 。 喷气引擎 、还有 火箭引擎 论文说:离子掺加物的电子接受强度可由 Zhang 建立的经验关系式计算 : L = Z/r k 2 7.7 X z + 8.0 式中 L 是元素的 路易士酸强度, Z/r k 2 ( z 是原子核电荷数, r k 2 是离子半径)与静电力和元素的离子电负性 X z 有关。我们曾多次报道,当路易士阳离子强度 L 增大时离子掺加物的电子接受强度降低。因此具有高 L 值的 ITO (或 IO )的高活动性,即导电率会提高,特别在氧化态。 S. J. Wen, G. Campet, and J. P. Manaud, ( 1993) , Active and Passive Elec.Comp.,1993,Vol.15,pp.67-74 Y. Zhang(1982) , Yonghe Zhang, Inorg. Chem. 21, 3386, 3389 (1982).
张永和离子共价论应用 (14) 张永和离子共价论导出 Wen 电子受体强度法 法国国家实验室 S. J. Wen, 等 用张永和离子共价论 推导出 电子受体强法 : M (m-n)+ ____ M m+ + ne - 论文说:离子掺加物 M m+ 的电子接受强度可由张永和建立的经验关系式计算: L = z/r k 2 7.7X + 8.0 式中 L 是元素的路易士阳离子强度 , z/r k 2 ( z 是原子核电荷数, r k 2 是离子半径)与静电力和元素的离子电负性 Xz 有关。我们曾多次报道,当路易士阳离子强度 L 增大时离子给予体中心的电子接受强度降低。因此与高 L 值给予体中心(特别是氧化态)掺和的 ITO (或 IO )具有高活动性,即高导电率。 Y. Zhang,, Inorg Chem., 1982, 21, 3889 . S. J. Wen, G. Campet, and J. P. Manaud Active and Passive Elec.Comp.,1993,Vol.15,pp.67-74
Yonghe Zhang ionocovalent theory applications (14) Electron-acceptor Strength is derived from Zhang ionocovalent theory Hoffman and al. have shown that, for sputtered highly degenerated ITO (indium tin oxide) films (n 10 20 cm -3 ), the conduction-band electrons are strongly scattered at the ionized donor centers. However, Wen et al. proposed that such a scattering effect (which, obviously,also inhibits the carrier nobility) should, a priori, be partially weakened if more appropriate n-type dopants are used to partially or totally substitute for tin in ITO. In fact these dopants M (m-n)+ should, ideally, be such as the ground energy states associated with the oxidized donor centers M m+ gives: M (m-n)+ ____ M m+ + ne - Where e - symbolizes the conduction-band electrons and are located in the conduction band in order to minimize their interaction with the carriers. On the other hand, a valuation of the electron-acceptor strength (EAS) of the ionized doping elements, M m+ , can be carried out using the empirical relationship established by Zhang : L = z/r k 2 7.7X + 8.0 where L symbolizes the Lewis acid strength of the element. z/r k 2 (where z is the charge number of the atomic core and r k 2 is the ionic radius) is related to electrostatic force and X z symbolizes the electronegativity of elements in valence states. They have reported that the electron-acceptor strength of the ionized donor centers, M m+ , decreases as the Lewis acid strength, L, of the element increases. Consequently, high mobilities, and thereby high conductivities, are likely to occur for ITO (or IO) samples heavily doped with donor centers having high L values, particularly in their oxidized form. Y. Zhang,, Inorg Chem., 1982, 21, 3889 . H. Hoffmann, J. Pickl, M. Schmidt, and D. Krause, Appl. Phys. 1978, 16, 239. H. Hoffmann, A. Dietrich, J. Pickl, and D. Krause , Appl. Phys. 1978, 16, 381 S. J. Wen, G. Campet, and J. P. Manaud Active and Elec.Comp.,1993,Vol.15,pp.67-74 S. J. Wen, G. Campet, J. Portier and J. Goodenough Mat. Science and Eng., B (accepted 1992)