AKHAN Tech and Argonne Nat'l Lab (CNM) Win Prestigious RD 100 Award for Miraj Diamond™ Platform AKHAN Technologies, Inc. today announced that its Miraj Diamond™ Platform, developed in collaboration with the Center for Nanoscale Materials (CNM) at Argonne National Laboratory, has been recognized by RD Magazine as one of the 100 most technologically significant products introduced during the past year, garnering an RD 100 award-- widely recognized as the "Oscars of Innovation." CHICAGO, July 8, 2013 /PRNewswire/ -- AKHAN Technologies, Inc., the global leader in diamond semiconductor technology, today announced that its Miraj Diamond™ Platform, developed in collaboration with the Center for Nanoscale Materials (CNM) at Argonne National Laboratory, has been recognized by RD Magazine as one of the 100 most technologically significant products introduced during the past year. The RD 100 award, widely recognized as the "Oscars of Innovation," highlights the work of team leader Anirudha Sumant, staff scientist at CNM, and inventor Adam Khan, Founder and CEO of AKHAN Technologies, Inc. The magazine will publicize the full list of winners in its October 2013 issue. According to its site, since 1963 the RD 100 Awards have identified revolutionary technologies newly introduced to the market. Many of these have become household names, helping shape everyday life for many Americans. These include the flashcube (1965), the automated teller machine (1973), the halogen lamp (1974), the fax machine (1975), the liquid crystal display (1980), the Kodak Photo CD (1991), the Nicoderm anti-smoking patch (1992), Taxol anticancer drug (1993), lab on a chip (1996), and HDTV (1998). More recent breakthroughs that have earned RD 100 Awards include next-generation magnetic resonance imaging machines, laser-based metal-forming tools, and the building blocks for fusion experiments. The Miraj Diamond™ Platform (CMOS compatible N-type nanocrystalline diamond thin film technology), represents the combination of two recently enabled diamond technologies-- low-temperature nanocrystalline diamond deposition technology developed by CNM ( presently exclusively licensed by AKHAN ) and the efficient n-type doping process developed by AKHAN. The combination of the technologies allows for a first time commercially feasible approach translating to next generation device performance with lower associated per-unit costs. The technology aims to further enable applications for Radio Frequency (RF) and Monolithic Microwave Integrated Circuits (MMIC) devices widely used in the telecommunication, defense, and commercial avionics markets. To view the full release please visit http://www.akhantech.com or click here Contact: 847-382-9568 Photo(s): http://www.prlog.org/12170090
应国立台湾大学朋友要求，在此宣传一下将于2013年10月在美国旧金山举行的第223届电化学国际会议—半导体化合物分会，希望大家踊跃参加： 224 th ECS Meeting San Francisco , California | October 27 – November 1, 2013 The Hilton San Francisco Hotel 333 O’Farrell Street, San Francisco, CA 94102 State-of-the-Art Program on Compound Semiconductors 55 http://www.electrochem.org/images/pdf/sf_call_papers.pdf - Abstracts are due May 17, 2013 or earlier! Abstract Submission is now OPEN! Compound and wide bandgap semiconductors are a significant enabler of numerous optoelectronic, high-speed, power, and sensor electronic materials, devices, and systems. The SOTAPOCS 55 symposium will address the most recent developments in inorganic compound and wide bandgap semiconductor technology, including traditional III-V materials, III-nitrides, II-VI materials, silicon carbide, diamond, and other emerging materials. Papers on both practical and fundamental issues, and new nanoscale investigations and application of compound semiconductor nanomaterials are solicited. The following areas are of particular interest: (1.) Advances in bulk, epitaxial and nanoscale growth technologies; (2.) Advances in device processing; (3.) Novel electronic, optoelectronic, and sensor devices; (4.) Schottky and ohmic contact technology; (5.) Dielectric properties and passivation; (6.) Wafer bonding and packaging; (7.) In situ and ex situ process monitoring; (8.) Material characterization and wafer level testing and mapping; (9.) Process induced defects; and (10.) Reliability and device degradation mechanisms; (11.) Growth and characterization of compound semiconductor nanoscale material and devices. (12.) Compound semiconductor nanodevices. A hard-cover issue of ECS Transactions is planned to be available “AT” the meeting. All authors accepted for presentation must submit their full text manuscript for the issue no later than June 21, 2013. All manuscripts will be submitted online, and must be in either MS Word or PDF format. Abstracts should be submitted electronically using the link above, and questions and inquiries should be sent to the symposium organizers: C. O’Dwyer , Department of Chemistry, and Tyndall National Institute, University College Cork, Cork, Ireland, Tel: +353-21-490-2732, email: c.odwyer@ucc.ie , E. Douglas , Sandia National Laboratories, Tel: 505-844-1674, email: Erica.Douglas@sandia.gov , J. H. He, Institute of Photonics and Optoelectronics Department of Electrical Engineering, National Taiwan University, Tel: +886-2-33669646, email: jhhe@cc.ee.ntu.edu.tw ; S. Jang, Department of Chemical Engineering, Dankook University, Korea, Tel: +82-31-8005-3623, email: jangmountain@dankook.ac.kr Confirmed Invited Speakers : Ying-Hao Chu , National Chiao Tung University , Taiwan Yi Cui , Stanford University , USA Lutz Geelhaar , Paul-Drude-Institute for Solid State Electronics (PDI) , Germany Ali Javey , University of California at Berkeley , USA Chennupati Jagadish , The Australian National University , Australia Hao-Chung Kuo , National Chiao Tung University , Taiwan Lincoln Lauhon , Northwestern University , USA Paul C. McIntyre , Stanford University , USA Taishi Takenobu , Waseda University , Japan Peidong Yang , University of California at Berkeley , USA Meeting Registration All participants, including authors and invited speakers of the 224 th ECS Meeting, are required to pay the registration fees. Registration information will be posted on the ECS website as it becomes available. Registration Fees | view here Hotel Reservations and Travel Information Make your hotel reservation now at The Hilton San Francisco Hotel - the meeting headquarters hotel with special discounted rates starting from $179. The cut-off date to make reservations is September 27, 2013 OR UNTIL THE BLOCK SELLS OUT, whichever comes first. Additional Hotels (proximity to Hilton San Francisco) Villa Florence Hotel : special discounted rates starting from $229. The cut-off date to make reservations is September 27, 2013 OR UNTIL THE BLOCK SELLS OUT, whichever comes first. Abri Hotel : special discounted rates starting from $229. The cut-off date to make reservations is September 27, 2013 OR UNTIL THE BLOCK SELLS OUT, whichever comes first. Transportation and Parking If you require a U. S. VISA, please begin the application process at least three months in advance of the meeting. Please visit the following site for further information: U.S. Visa Information for Foreign Travelers Request ECS Letter of Invitation Student Travel Grants Currency Converter
2。电光闪烁的物理世家 法拉第发现了：硫化银的导电性随温度上升而增加。一百多年后的今天，我们把它归纳到半导体的特性之一：热敏性。除了热敏性之外，半导体的特性还有：光敏性、整流性、以及掺杂性。这一节叙述‘光敏性’。 继法拉第之后，法国物理学家 A.E.贝克勒尔 Alexandre-EdmondBecquerel（1820–1891）发现了光生伏特效应。 http://www.medarus.org/Medecins/MedecinsTextes/becquerel.html 贝克勒尔一家四代五个物理学家，见上图。 A.E.贝克勒尔是中间一位，其余的是： AntoineCésar Becquerel (1788-1878), father of A.E.贝克勒尔。 LouisAlfred Becquerel (1814-1862), brother of A.E.贝克勒尔。 HenriBecquerel (1852-1908), son of A.E.贝克勒尔。 JeanBecquerel (1878-1953), grandson of A.E.贝克勒尔。 上图中的几个人，除了第二位贝克勒尔去世早，不广为人知，其余的都成就不凡。 A.E.贝克勒尔的父亲曾在拿破仑麾下服役，滑铁卢战役之后专攻科学，曾促进了电化学的创立，也是率先研究电发光现象的物理教授，A.E.贝克勒尔的儿子亨利·贝可勒尔，因发现天然放射性现象，与居里夫妇分享1903年的诺贝尔物理学奖。他的孙子后来也是法国颇负声名的物理学家。 我们现在知道，电和光都是能量的某种存在方式，这两种能量会互相转换。电转换成光的现象在大自然经常被观察到，比如：带电的大气放电时产生的闪电；科学家在研究放电现象时，也经常观察到的火花和闪光等。但是，从光到电的现象就不是那么普遍了。当时， A.E.贝克勒尔的父亲就是从化学的角度来研究电发光现象。老子研究从‘电’到‘光’，儿子则进一步地想，光是不是也能产生‘电’呢？果然不出所料，1839年，19岁的A.E.贝克勒尔在他父亲的实验室里，第一次观察到了这种现象。 A.E.贝克勒尔将氯化银放在酸性溶液中，用两片浸入电解质溶液的金属（铂）作为电极，见下图。贝克勒尔发现，如果有阳光照射时，两个电极间会产生额外的电压。这不就是‘光’转换成了‘电’吗？贝克勒尔将此现象称为光生伏特效应，这是历史上最早被发现的半导体的第二个特征。 贝克勒尔发现的是液体中的光生伏特效应，也被称为贝克勒尔效应。到 1883年，亚当斯等在金属和硒片上发现固态光伏效应，并制成了第一个“硒光电池” 【 1】 。 1873年，英国的史密斯发现硒晶体材料在光照下导电性增加，这是半导体又一个与光照有关的特性：光电导效应。 从现代物理学的观点，刚才所说的半导体的两个特性，和 1887年德国物理学家赫茲发现的光电效应，物理本质上是相关的，我们可把它们都归类于半导体的光敏性。也可以把它们统称为‘光电效应’。 光电效应 【 2】 最早是被德国物理学家赫茲发现的。赫茲用两个锌质小球做实验，当他用光线照射一个小球时，则发现有电火花跳过两个小球之间，如果用蓝光或紫外线照射，电火花最明显。这个现象后来（ 1905年 ）被爱因斯坦从量子力学的观点加以解释，使爱因斯坦得到 1921年的诺贝尔物理奖。 和贝克勒尔家庭类似，赫兹一家也有好几个物理学家。发现光电效应的海因里希·鲁道夫·赫兹（ Heinrich Rudolf Hertz，1857-1894）和发现电磁波的赫兹是同一个人。鲁道夫·赫兹虽然只活了36岁，但他的两个发现都举足轻重：电磁波的发现证明了麦克斯韦电磁理论的正确性，而光电效应的发现对量子理论的创立及发展功不可没。 鲁道夫·赫兹的侄子古斯塔夫·路德维希·赫兹（ Gustav Ludwig Hertz，1887年－1975年），也是物理学家，量子力学的先驱，1925年诺贝尔物理学奖获得者。路德维希·赫兹的儿子卡尔·赫尔穆特·赫兹（Carl Hellmuth Hertz ， 1920-1990 ）则发明了医疗用超声波技术和喷墨打印技术。 赫茲发现的是金属的光电效应，半导体也能产生光电效应，统而言之，光电效应指的是因光照而引起物体电学特性的改变。半导体的光电效应分为光电子发射、光电导效应和光生伏特效应。前一种发生在物体表面，又称外光电效应。后两种发生在物体内部，称为内光电效应。 半导体的光电效应 上图说明了几种光电效应的异同点。半导体材料无光照时，导带上有很少的自由电子。在光照射情况下，低能量的电子吸收了光子能量，从键合状态过度到自由状态。如果光子的能量足够大，使得电子能够逸出物质表面而发射出去，这便是被赫兹所观测到的光电发射效应，或称外光电效应。 如果低能级的电子吸收了光子能量后，并未被发射，而只是被激发跃迁到导带中，大大地增加了自由电子的数目，从而增强了物质的导电性。这种现象被称为：光电导效应。更进一步考虑，如果被光照射的物质材料是不均匀的，或由两种不同的物质层构成的情况。这时，由于两种物质在光照下产生的导电性能变化不一样，使得自由电子偏向于聚集到一种物质而离开另一种物质，由此而形成一个电位差，这便是 1839年首次被贝克勒尔观察到的光生伏特效应。 【 1】W.G. Adams andR.E. Day observed the photovoltaic effect in solidified selenium, and publisheda paper on the selenium cell. 'The action of light on selenium,' inProceedings of the Royal Society, A25, 113. 1877 【 2】Hertz, H.R.Ueber sehr schnelle electrische Schwingungen, Annalen der Physik,vol. 267, no. 7, p. 421-448, May 1887. http://matidavid.com/pioneer_files/Hertz.htm 上一篇：法拉第 系列科普目录 下一篇： 猫胡子侦测器
标签: 半导体
